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Evidence of metamorphism at ultrahigh‐pressure (UHP) conditions is documented by the presence of coesite, diamond and/or majoritic garnet. However, the growth of UHP‐stable phases such as majoritic garnet is often volumetrically low, and overprinting during exhumation can obscure evidence of UHP growth, making it difficult to positively identify UHP rocks. In this study, we selected garnet‐kyanite schists from three microdiamond‐bearing localities within the Rhodope Metamorphic Complex, located in eastern Greece. Samples from Xanthi, Sidironero, and Kimi have similar bulk rock compositions, but the pressure–temperature (P–T) paths differ. Because the major phases record vanishingly little evidence of metamorphism at UHP conditions, we analyzed zircon grains with complex textures to evaluate if zircon preserves a record of UHP metamorphism. Zircon grains from all localities have cores and rims separated by a characteristic interface domain, as revealed by cathodoluminescence (CL) imaging. The detrital igneous cores range in age from c. 2.5 Ga to 220 Ma and exhibit a negative Eu* anomaly, a Yb/Gd of 10–100, and variable Th/U (0–1.2). Rims yield dates of 150–125 Ma with Yb/Gd of 0.1–10 and Th/U of 0–0.2. Interface domains yield dates 165–145 Ma with Yb/Gd ranging between 0–1000 and Th/U < 0.2. We interpret the distinctive CL textures and Yb/Gd of the interface domains as evidence of zircon that reacted at UHP. The interface domain in zircon from all petrographic contexts yields variable Yb/Gd ratios that are significantly higher than both cores and rims. We therefore interpret that zircon recrystallized via interface‐coupled dissolution–reprecipitation reaction; this process preferentially partitioned heavy rare earth elements within the interface domain, which explains the higher Yb/Gd ratios. The rim domains equilibrated with the matrix, producing a relatively homogeneous and low Yb/Gd ratio in these domains. The spatial extent and degree of preservation of interface domains are interpreted as a function of the P–T path and minor variations in bulk composition. Interface domains are best preserved in rocks from Xanthi and Sidironero; in these samples, thin, homogeneous, garnet‐stable rims only partially overprint and crosscut the interface domain. In contrast, rocks from Kimi followed a higher‐temperature trajectory and the zircon grains grew large rim domains that overprinted much of the interface domain and the detrital core. Zircon grains from plagioclase‐rich versus quartz‐rich domains within samples from Sidironero show differences in texture, which indicates that local bulk composition can affect what evidence of UHP metamorphism is preserved. Collectively, these samples provide a new, durable marker of metamorphism in UHP rocks and yield new insight about which factors affect the preservation of UHP textures. 

Abstract The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium concentration. The critical field of superconductivity, however, does not follow the same behavior as critical temperature with indium concentration and exhibits a carrier-density-dependent violation of the Pauli limit. The electron–phonon coupling, according to the McMillan formula, exhibits a systematic enhancement with indium concentration, suggesting a potential violation of Bardeen–Cooper–Schrieffer (BCS) weak coupling at high indium concentrations. 

We report a two-step film-growth process using suboxide molecular-beam epitaxy (S-MBE) that produces Si-doped α-Ga2O3 with record transport properties. The method involves growing a relaxed α-(AlxGa1−x)2O3 buffer layer on m-plane sapphire at a relatively high substrate temperature (Tsub), ∼750 °C, followed by an Si-doped α-Ga2O3 overlayer grown at lower Tsub, ∼500 °C. The high Tsub allows the ∼3.6% lattice-mismatched α-(AlxGa1−x)2O3 buffer with x = 0.08 ± 0.02 to remain epitaxial and phase pure during relaxation to form a pseudosubstrate for the overgrowth of α-Ga2O3. The optimal conditions for the subsequent growth of Si-doped α-Ga2O3 by S-MBE are 425 °C ≤ Tsub ≤ 500 °C and P80% O3 = 5 × 10−6 Torr. Si-doped α-Ga2O3 films grown with this method at Tsub > 550 °C are always insulating. Secondary-ion mass spectrometry confirms that both the insulating and conductive films have uniform silicon incorporation. In conductive films with 1019 ≤ NSi ≤ 1020 cm−3, the incorporated silicon is ∼100% electrically active. At NSi ≤ 1019 cm−3, the carrier concentration (n) plummets. A maximum Hall mobility (μ) = 90 cm2V·s at room-temperature is measured in a film with n = 2.9 × 1019 cm−3 and a maximum conductivity (σ) = 650 S/cm at room-temperature in a film with n = 4.8 × 1019 cm−3. A threading dislocation density of (5.6 ± 0.6) × 1010 cm−2 is revealed by scanning transmission electron microscopy, showing that there is still enormous room to improve the electrical properties of doped α-Ga2O3 thin films. 

Abstract Members of the familyTrichomeriaceae,belonging to theChaetothyrialesorder and theAscomycotaphylum, are known for their capability to inhabit hostile environments characterized by extreme temperatures, oligotrophic conditions, drought, or presence of toxic compounds. The genusKnufiaencompasses many polyextremophilic species. In this report, the genomic and morphological features of the strain FJI-L2-BK-P2 presented, which was isolated from the Mars 2020 mission spacecraft assembly facility located at the Jet Propulsion Laboratory in Pasadena, California. The identification is based on sequence alignment for marker genes, multi-locus sequence analysis, and whole genome sequence phylogeny. The morphological features were studied using a diverse range of microscopic techniques (bright field, phase contrast, differential interference contrast and scanning electron microscopy). The phylogenetic marker genes of the strain FJI-L2-BK-P2 exhibited highest similarities with type strain ofKnufia obscura(CBS 148926^T) that was isolated from the gas tank of a car in Italy. To validate the species identity, whole genomes of both strains (FJI-L2-BK-P2 and CBS 148926^T) were sequenced, annotated, and strain FJI-L2-BK-P2 was confirmed asK. obscura.The morphological analysis and description of the genomic characteristics ofK. obscuraFJI-L2-BK-P2 may contribute to refining the taxonomy ofKnufiaspecies. Key morphological features are reported in thisK. obscurastrain, resembling microsclerotia and chlamydospore-like propagules. These features known to be characteristic features in black fungi which could potentially facilitate their adaptation to harsh environments. 

Development of a high-performance, p-type oxide channel is crucial to realize all-oxide complementary metal–oxide semiconductor technology that is amenable to 3D integration. Among p-type oxides, α-SnO is one of the most promising owing to its relatively high hole mobility {as high as 21 cm2 V−1 s−1 has been reported [M. Minohara et al., J. Phys. Chem. C 124, 1755–1760 (2020)]}, back-end-of-line compatible processing temperature (≤400 °C), and good optical transparency for visible light. Unfortunately, doping control has only been demonstrated over a limited range of hole concentrations in such films. Here, we demonstrate systematic control of the hole concentration of α-SnO thin films via potassium doping. First-principles calculations identify potassium substitution on the tin site (KSn) of α-SnO to be a promising acceptor that is not (self)-compensated by native vacancies or potassium interstitials (Ki). We synthesize epitaxial K-doped α-SnO thin films with controlled doping concentration using suboxide molecular-beam epitaxy. The concentration of potassium is measured by secondary ion mass spectrometry, and its incorporation into the α-SnO structure is corroborated by x-ray diffraction. The effect of potassium doping on the optical response of α-SnO is measured by spectroscopic ellipsometry. Potassium doping provides systematic control of hole doping in α-SnO thin films over the 4.8 × 1017 to 1.5 × 1019 cm−3 range without significant degradation of hole mobility or the introduction of states that absorb visible light. Temperature-dependent Hall measurements reveal that the potassium is a shallow acceptor in α-SnO with an ionization energy in the 10–20 meV range. 

Abstract Gneiss domes are an integral element of many orogenic belts and commonly provide tectonic windows into deep crustal levels. Gneiss domes in the New England segment of the Appalachian orogen have been classically associated with diapirism and fold interference, but alternative models involving ductile flow have been proposed. We evaluate these models in the Gneiss Dome belt of western New England with U‐Th‐Pb monazite, xenotime, zircon, and titanite petrochronology and major and trace element thermobarometry. These data constrain distinct pressure–temperature–time (P‐T‐t) paths for each unit in the gneiss dome belt tectono‐stratigraphy. The structurally lowest units, Laurentia‐derived migmatitic gneisses of the Waterbury dome, document two stages of metamorphism (455–435 and 400–370 Ma) with peak Acadian metamorphic conditions of ~1.0–1.2 GPa at 750–780°C at 391 ± 7 to 386 ± 4 Ma. The next structurally higher unit, the Gondwana‐derived Taine Mountain Formation, records Taconic (peak conditions: 0.6 GPa, 600°C at 441 ± 4 Ma) and Acadian (peak: 0.8–1.0 GPa, 650°C at 377 ± 4 Ma) metamorphism. The overlying Collinsville Formation yielded a 473 ± 5 Ma crystallization age and evidence for metamorphic conditions of 650°C at 436 ± 4 Ma and 1.2–1.0 GPa, 750–775°C at 397 ± 4 to 385 ± 6 Ma. The structurally higher Sweetheart Mountain Member of the Collinsville Formation yielded only Acadian zircon, monazite, and xenotime dates and evidence for high‐pressure granulite facies metamorphism (1.8 GPa, 815°C) at circa 380–375 Ma. Cover rocks of the dome‐mantling The Straits Schist records peak conditions of ~1 GPa, 700°C at 386 ± 6 to 380 ± 4 Ma. Garnet breakdown to monazite and/or xenotime occurred in all units at circa 375–360 and 345–330 Ma. Peak Acadian metamorphic pressures increase systematically from the structurally lowest to highest units (from 1.0 to 1.8 GPa). This inverted metamorphic sequence is incompatible with the diapiric and fold interference models, which predict the highest pressures at the structurally lowest levels. Based upon P‐T‐t and structural data, we prefer a model involving, first, circa 380 Ma thrust stacking followed by syn‐collisional orogen parallel extension, ductile flow, and rise of the domes between 380 and 365 Ma. Garnet breakdown at circa 345–330 Ma is interpreted to reflect further exhumation during collapse of the Acadian orogenic plateau. These results highlight the power of integrating petrologic constraints with paired geochemical and geochronologic data from multiple chronometers to test structural and tectonic models and show that syn‐convergent orogen parallel ductile flow dramatically modified earlier accretion‐related structures in New England. Further, the Gneiss Dome belt documents gneiss dome development in a syn‐collisional, thick crust setting, providing an ancient example of middle to lower crustal processes that may be occurring today in the modern Himalaya and Pamir Range. 

Abstract Methane (CH₄) dynamics in wetlands are spatially variable and difficult to estimate at ecosystem scales. Patches with different plant functional types (PFT) represent discrete units within wetlands that may help characterize patterns in CH₄variability. We investigate dissolved porewater CH₄concentrations, a representation of net CH₄production and potential source of atmospheric flux, in five wetland patches characterized by a dominant PFT or lack of plants. Using soil, porewater, and plant variables we hypothesized to influence CH₄, we used three modeling approaches—Classification and regression tree, AIC model selection, and Structural Equation Modeling—to identify direct and indirect influences on porewater CH₄dynamics. Across all three models, dissolved porewater CO₂concentration was the dominant driver of CH₄concentrations, partly through the influence of PFT patches. Plants in each patch type likely had variable influence on CH₄via root exudates (a substrate for methanogens), capacity to transport gas (both O₂from and CH₄to the atmosphere), and plant litter quality which impacted soil respiration and production of CO₂in the porewater. We attribute the importance of CO₂to the dominant methanogenic pathway we identified, which uses CO₂as a terminal electron acceptor. We propose a mechanistic relationship between PFT patches and porewater CH₄dynamics which, when combined with sources of CH₄loss including methanotrophy, oxidation, or plant‐mediated transport, can provide patch‐scale estimates of CH₄flux. Combining these estimates with the distribution of PFTs can improve ecosystem CH₄flux estimates in heterogenous wetlands and improve global CH₄budgets. 

The composition of the lower continental crust, as well as its formation, growth, and evolution, remains a fundamental subject to be understood. In this study, we carry out a comparative and integrative analysis of seismic tomographic models, teleseismic receiver function results, and Airy isostasy in order to investigate the properties of the lower continental crust in eastern North America. We extract the depths for Vs of 4.0 km/s, 4.2 km/s, and 4.5 km/s from three selected tomographic models and calculate the differences between the Vs depth contours and the Moho depth defined by receiver functions. We then calculate the Airy isostatic Moho depth and its misfit with the receiver‐function‐defined Moho. Our analysis reveals three key features: (a) the deepening of the Vs depth contours and the strong negative Airy misfit within the U.S. Grenville Province; (b) a seismically faster‐than‐average and compositionally denser‐than‐average lowermost crust in the eastern North American Craton and the Grenville Province; and (c) the thickest, seismically fastest, and densest lowermost crust beneath the southern Grenville Front, the southern Grenville‐Appalachian boundary, and the U.S.‐Canada national border. We suggest that the lower crust of the craton and the Grenville Province has densified through garnet‐forming metamorphic reactions during and after orogenesis, contributing to the widely distributed fast‐velocity layer. The lower crust beneath the tectonic boundaries could have experienced more extensive garnet growth during orogenesis and emplacement of mafic magma. This study provides new constraints on the seismic and compositional properties of the lower crust in eastern North America.